Transfer learning in deep neural network based under-sampled MR image reconstruction

In Magnetic Resonance Imaging (MRI), the success of deep learning-based under-sampled MR image reconstruction depends on: (i) size of the training dataset, (ii) generalization capabilities of the trained neural network. Whenever there is a mismatch between the training and testing data, there is a need to retrain the neural network from scratch with thousands of MR images obtained using the same protocol. This may not be possible in MRI as it is costly and time consuming to acquire data. In this research, a transfer learning approach i.e. end-to-end fine tuning is proposed for U-Net to address the data scarcity and generalization problems of deep learning-based MR image reconstruction. First the generalization capabilities of a pre-trained U-Net (initially trained on the human brain images of 1.5 T scanner) are assessed for: (a) MR images acquired from MRI scanners of different magnetic field strengths, (b) MR images of different anatomies and (c) MR images under-sampled by different acceleration factors. Later, end-to-end fine tuning of the pre-trained U-Net is proposed for the reconstruction of the above-mentioned MR images (i.e. (a), (b) and (c)). The results show successful reconstructions obtained from the proposed method as reflected by the Structural SIMilarity index, Root Mean Square Error, Peak Signal-to-Noise Ratio and central line profile of the reconstructed images.     

Observers Design for a Class of Nonlinear Stochastic Discrete-Time Systems

International Journal of Theoretical Physics - This paper mainly studied the observer design of Lipschitz stochastic discrete system. For the first time, generalized Lipschitz conditions are...     

TFSI钝化晶体硅表面性质的第一性原理研究

晶体硅表面钝化是高效率晶体硅太阳能电池的核心技术,直接影响晶体硅器件的性能。本文采用第一性原理方法研究了一种超强酸-双三氟甲基磺酰亚胺(TFSI)钝化晶体硅(001)表面。研究发现,TFSI的四氧原子结构能够与Si(001)表面Si原子有效成键,吸附能达到-5.124 eV。电子局域函数研究表明,TFSI的O原子与晶体硅表面的Si的成键类型为金属键。由态密度和电荷差分密度分析可知,Si表面原子的电子向TFSI转移,从而有效降低了Si表面的电子复合中心,有利于提高晶体硅的少子寿命。Bader电荷显示,伴随着TFSI钝化晶体硅表面的Si原子,表面Si原子电荷电量减少,而TFSI中的O原子和S原子电荷电量相应增加,进一步证明了TFSI钝化Si表面后的电子转移。该工作为第一性原理方法预测有机强酸钝化晶体硅表面的钝化效果提供了数据支撑。     

Optical Trapping with Focused Surface Waves

Near-field optical trapping can be realized with focused evanescent waves that are excited at the water–glass interface due to the total internal reflection, or with focused plasmonic waves excited on the water–gold interface. Herein, the performance of these two kinds of near-field optical trapping techniques is compared using the same optical microscope configuration. Experimental results show that only a single-micron polystyrene bead can be trapped by the focused evanescent waves, whereas many beads are simultaneously attracted to the center of the excited region by focused plasmonic waves. This difference in trapping behavior is analyzed from the electric field intensity distributions of these two kinds of focused surface waves and the difference in trapping behavior is attributed to photothermal effects due to the light absorption by the gold film.     

Identity-Based Quantum Designated Verifier Signature

International Journal of Theoretical Physics - Designated verifier signatures are very useful in the applications such as e-voting and auction. In this paper, an identity-based quantum designated...